youda transistor B834 si pnp transistor ?a B834 description and features *collector-emitter voltage: bv cbo = -60v *collector current up to -3a *high h fe linearity pin configurations pin symbol 1 emitter 2 collector 3 base absolute maximum ratings (tamb=25 ?? ) parameter symbol value unit collector-base voltage bv cbo -60 v collector-emitter voltage bv ceo -50 v emitter-base voltage bv ebo -7 v tcase=25 ?? 30 w collector dissipation tamb=25 ?? p cm 1.5 w dc i cm -3 a collector current pulse icp -7 a base current i b -0.6 a junction temperature tj +150 ?? storage temperature tstg -55 ?? +150 ?? electrical characteristics (tamb=25 ?? ,all voltage referenced to gnd unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo vc b =-50v, i e =0 -100 na emitter cut-off current i ebo v eb =-5v, i c =0 -100 na h fe 1 vc e =-5v, i c =20ma 30 200 dc current gain h fe 2 vc e =-5v, i c =-0.5a 100 400 collector-emitter saturation voltage v ce(sat) ic=-3a, i b =-0.3a -0.3 -0.5 v base-emitter saturation voltage v be(sat) ic=-3a, i b =-0.3a -1.0 -2.0 v current gain bandwidth product f t vc e =-5v, i c =-0.1a 5 mhz output capacitance cob vc b =-10v, i e =0,f=1mhz 80 pf classification of h fe rank q p e range 100 ?? 200 160 ?? 320 200 ?? 400 wuxi youda electronics co., ltd add: no.5 xijin road, national hi-tech industrial development zone, wuxi jiangsu china tel: 86-510-5205117 86-510-5205108 fax: 86-510-5205110 website: www.e-youda.com shenzhen office tel o 86-755-83740369 13823533350 fax o 86-755-83741418 ver 3.1 1 of 1 2004-9-20
|
